B jayant baliga biography of michael
B jayant baliga biography of michael
B jayant baliga biography of michael w!
B. Jayant Baliga
Indian electrical engineer
Bantval Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).[1][2]
In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT.[3][4]
Early life and education
Baliga grew up in Jalahalli, a small village near Bangalore, India.
His father, Jayant studied at Bishop Cotton Boys' School, Bangalore. He received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute.[1] Bantw